供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
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描述
由其分销商提供的 Infineon IRF6715MTRPBF 的描述。
Trans MOSFET N-CH 25V 34A 7-Pin Direct-FET MX T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:34A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0013ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.34 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.6 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.6 mΩ
Rise Time31 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time20 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm