Infineon IRF6712STRPBF

Name: Infineon IRF6712STRPBF
Brand: Infineon
SKU: IRF6712STRPBF

Single N-Channel 25 V 4.9 mOhm 18 nC HEXFET® Power Mosfet - DirectFET®

$ 1.126

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF6712STRPBF	4,288	1		1.548	1.548	1.548	1.548	1.548
Rochester Electronics	2	IRF6712STRPBF	7,070					0.848	0.704	0.628	3h
RS (Formerly Allied Electronics)		IRF6712STRPBF	0	4800	Bulk					0.900	20h
Farnell	2	IRF6712STRPBF	0	1	Cut Tape	0.521*	0.521*	0.521*	0.521*	0.521*	3h
Verical		IRF6712STRPBF	4,288	3			1.508	1.508	1.508	1.508

数据表和文档

下载 Infineon IRF6712STRPBF 的数据表和制造商文档。

Farnell

Datasheet10 页12 年前

IHS

Newark

iiiC

库存历史记录

3 个月趋势:

-0.22%

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供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF6712STRPBF 的描述。

Single N-Channel 25 V 4.9 mOhm 18 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

Trans MOSFET N-CH Si 25V 17A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 25V 17A DIRECTFET

Win Source

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

N Channel, MOSFET, 25V, 17A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon