Infineon IRF6709S2TR1PBF

Name: Infineon IRF6709S2TR1PBF
Brand: Infineon
SKU: IRF6709S2TR1PBF

Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

$ 1.63

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6709S2TR1PBF	0	1K	Bulk				1.630	1.470	6h
Farnell	IRF6709S2TR1PBF	0	5			0.805*	0.623*	0.620*	0.620*	12h
Win Source	WS-IRF6709S2TR1PBF	8,500	45				1.348	0.899	0.899	14h
Anlinkda	IRF6709S2TR1PBF	58,590			0.524	0.470	0.421	0.403	0.392	2d
RC Electronics	IRF6709S2TR1PBF	38,363	1		0.530	0.490	0.440	0.420	0.410	>1wk

数据表和文档

下载 Infineon IRF6709S2TR1PBF 的数据表和制造商文档。

IHS

Datasheet10 页17 年前

element14 APAC

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-06-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF6709S2TR1PBF 的描述。

Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

Avnet

DIRECTFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

element14 APAC