Infineon IRF6616TRPBF

Name: Infineon IRF6616TRPBF
Brand: Infineon
SKU: IRF6616TRPBF

Single N-Channel 40 V 5 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®

$ 1.21

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF6616TRPBF	107					1.460	1.210	1.080	12h
RS (Formerly Allied Electronics)		IRF6616TRPBF	0	4800	Bulk					1.950	5h
Farnell	2	IRF6616TRPBF	0	1	Cut Tape	2.877*	2.877*	2.877*	2.877*	2.877*	12h
Weyland Electronics Group Pte. Ltd.		IRF6616TRPBF	48,000	1	Tape & Reel	1.202	1.202	1.202	1.202	1.202	1d
Win Source	2	WS-IRF6616	48,000	18				2.143	1.857	1.857	13h

数据表和文档

下载 Infineon IRF6616TRPBF 的数据表和制造商文档。

IHS

Datasheet11 页18 年前

Datasheet10 页18 年前

Newark

库存历史记录

3 个月趋势:

-98.66%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-05-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

描述

由其分销商提供的 Infineon IRF6616TRPBF 的描述。

Single N-Channel 40 V 5 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

N CH MOSFET, 40V, 15A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

element14 APAC

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Package/Case:DirectFET MX; Power Dissipation, Pd:89W; Continuous Drain Current - 25 Deg C:19A; Drain Source On Resistance @ 10V:5mohm ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon