Infineon IRF6612TR1PBF

Name: Infineon IRF6612TR1PBF
Brand: Infineon
SKU: IRF6612TR1PBF

Trans MOSFET N-CH 30V 24A 7-Pin Direct-FET MX T/R

$ 3.12

Obsolete

制造商页面数据表

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6612TR1PBF	0	1K	Bulk				3.120	2.870	4h
Farnell	IRF6612TR1PBF	0	1		0.971*	0.971*	0.971*	0.971*	0.971*	2h
Component Stockers USA	IRF6612TR1PBF	10,868			1.080	1.050	1.020	0.990	0.990	>1wk
Win Source	WS-IRF6612TR1PBF	48,340	95				0.620	0.414	0.414	15h
Worldway Electronics	IRF6612TR1PBF	17,311	7	Tape & Reel		0.880	0.853	0.809	0.809	1d

数据表和文档

下载 Infineon IRF6612TR1PBF 的数据表和制造商文档。

IHS

Datasheet10 页20 年前

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-02-13

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF6612TR1PBF 的描述。

Trans MOSFET N-CH 30V 24A 7-Pin Direct-FET MX T/R

Verical

30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET MX PKG

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:19A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

Newark

MOSFET, N, DIRECTFET, 30V, MX; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:24A; Resistance, Rds On:2.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:MX; Termination Type:SMD; Base Number:6612; Current, Idm Pulse:190A; Power Dissipation:2.8mW; SMD Marking:2.8; Voltage, Vds:30V; Voltage, Vgs th Max:2.25V; Voltage, Vgs th Min:1.35V

Farnell