Infineon IRF6611TR1

Name: Infineon IRF6611TR1
Brand: Infineon
SKU: IRF6611TR1

Power Field-Effect Transistor, 27A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min
Farnell	IRF6611TR1	0	1	1.672*	1.672*	1.618*	1.564*	1.564*	8h
Win Source	WS-IRF6611TR1	20	2		20.345	17.632	17.632	17.632	22h
ICPartonline	IRF6611TR1	39,522		4.000	3.800	3.600	3.400	3.200	>1wk
Anlinkda	IRF6611TR1	19,716		1.326	1.188	1.073	1.025	0.987	3d
Run Hong Electronics	IRF6611TR1	10,042		3.056	3.056	3.056	3.056	3.056	9h

数据表和文档

下载 Infineon IRF6611TR1 的数据表和制造商文档。

IHS

Datasheet10 页20 年前

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-02-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

描述

由其分销商提供的 Infineon IRF6611TR1 的描述。

Power Field-Effect Transistor, 27A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 30V 32A DIRECTFET

DigiKey

MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:4860pF; Current Id Max:22A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:3.9W; Power Dissipation Pd:3.9W; Pulse Current Idm:220A; Reverse Recovery Time trr Typ:24ns; SMD Marking:6611; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V

element14 APAC