Infineon IRF60R217

Name: Infineon IRF60R217
Brand: Infineon
SKU: IRF60R217

60V Single N-Channel HEXFET Power MOSFET in a DPAK (TO-252) package, DPAK-3, RoHS

$ 0.58

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF60R217	1,480	1		0.475	0.475	0.475	0.475	0.475
Rochester Electronics		IRF60R217	20,000					0.649	0.539	0.480	12h
DigiKey	3	IRF60R217CT-ND	2,204	1	Cut Tape	2.000	1.272	0.856	0.621	0.621
Avnet		IRF60R217	0	2K							14h
Farnell	2	IRF60R217	0	2K	Custom Reel					0.540*	12h

数据表和文档

下载 Infineon IRF60R217 的数据表和制造商文档。

IHS

Datasheet11 页10 年前

Upverter

库存历史记录

3 个月趋势:

-7.61%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-01-06

Lifecycle StatusObsolete (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IRF60R217 的描述。

60V Single N-Channel HEXFET Power MOSFET in a DPAK (TO-252) package, DPAK-3, RoHS

Infineon SCT

Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK

Future Electronics

Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon