供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-18
Lifecycle StatusObsolete (Last Updated: 9 months ago)
描述
由其分销商提供的 Infineon IRF520VPBF 的描述。
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 100V, 9.6A, 165 MOHM, 14.7 NC QG, TO-220AB
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.6A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:9.6A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:37A; Junction to Case Thermal Resistance A:3.4°C/W; On state resistance @ Vgs = 10V:165ohm; Power Dissipation:44W; Power Dissipation Pd:44W; Voltage, Vds Max:100V; Transistor Case Style:TO-220AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.6 A
Current Rating9.6 A
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vds)100 V
Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation44 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingBulk
Resistance165 Ω
Rise Time23 ns
Voltage Rating (DC)100 V