Infineon IQE013N04LM6ATMA1

Mosfet, N-Ch, 40V, 205A, Tson Rohs Compliant: Yes |Infineon Technologies IQE013N04LM6ATMA1

Transistor MOSFET N-CH 40V 205A 8-Pin TSON T/R

N-Channel 40 V 205 A 1.35 mOhm Surface Mount OptiMOSTM Power-MOSFET - TSON-8-4

Trans MOSFET N-CH 40V 31A 8-Pin TSON EP T/R

MOSFET N-CH 40V 31A/205A 8TSON / N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-TSON-8-4

Power Field-Effect Transistor, 170A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon MOSFET IQE013N04LM6ATMA1

场效应管, MOSFET, N沟道, 40V, 205A, TSON;

IQE013N04LM6 - OPTIMOS LOW-VOLTA

Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor.One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.