Infineon IQE004NE1LM7CGSCATMA1

Name: Infineon IQE004NE1LM7CGSCATMA1
Brand: Infineon
SKU: IQE004NE1LM7CGSCATMA1

Mosfet, N-Ch, 15V, 379A, Whtfn Rohs Compliant: Yes |Infineon Technologies IQE004NE1LM7CGSCATMA1

$ 1.155

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Distributor		SKU		Min	Pkg
Newark		IQE004NE1LM7CGSCATMA1	338	1	Cut Tape	4.080	2.800	2.100	1.740	1.740
DigiKey	2	448-IQE004NE1LM7CGSCATMA1CT-ND	5,797	1	Cut Tape	3.660	2.367	1.634	1.219	1.134
Arrow Electronics	2	IQE004NE1LM7CGSCATMA1	5,615	1		3.156	2.056	1.429	1.121	1.121
Avnet		IQE004NE1LM7CGSCATMA1	0	6K						1.011	18h
Mouser		726-IQE004NE1LM7CGSC	32,767	1	Tape & Reel	3.130	2.030	1.400	1.090	1.020

数据表和文档

下载 Infineon IQE004NE1LM7CGSCATMA1 的数据表和制造商文档。

库存历史记录

3 个月趋势:

+0.32%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2023-09-26

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IQE004NE1LM7CGSCATMA1 的描述。

Mosfet, N-Ch, 15V, 379A, Whtfn Rohs Compliant: Yes |Infineon Technologies IQE004NE1LM7CGSCATMA1

Newark

N-Channel 15 V 58A (Ta), 379A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-WHTFN-9

Future Electronics

Trans MOSFET N-CH 15V 58A 9-Pin WHTFN EP T/R

Verical

场效应管, MOSFET, N沟道, 15V, 379A, WHTFN;

element14 APAC

IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized parallelization. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Power SMPS applications.

Infineon