供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-11-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Infineon IPZA60R080P7XKSA1 的描述。
N-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
Trans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use, PG-TO247-4, RoHS
Infineon SCT
Infineon MOSFET IPZA60R080P7XKSA1
Mosfet, N-Ch, 600V, 37A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPZA60R080P7XKSA1
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)37 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity240
Power Dissipation129 W
Schedule B8541290080
Turn-Off Delay Time70 ns
Turn-On Delay Time15 ns
Dimensions
Height25.27 mm