Infineon IPW65R018CFD7XKSA1

Name: Infineon IPW65R018CFD7XKSA1
Brand: Infineon
SKU: IPW65R018CFD7XKSA1

Mosfet, N-Ch, 650V, 106A, To-247 Rohs Compliant: Yes |Infineon Technologies IPW65R018CFD7XKSA1

$ 9.758

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Distributor		SKU		Min	Pkg
Newark		IPW65R018CFD7XKSA1	232	1		20.340	15.230	15.230	15.230	15.230
Arrow Electronics		IPW65R018CFD7XKSA1	100	1		9.658	9.658	9.658	9.658	9.658
Rochester Electronics		IPW65R018CFD7XKSA1	19					9.270	8.300	7.810	21h
DigiKey		448-IPW65R018CFD7XKSA1-ND	481	1	Tube	18.340	18.340	11.368	9.270	9.270
Future Electronics	2	IPW65R018CFD7XKSA1	0	30	Tube			15.070	14.840	14.840

数据表和文档

下载 Infineon IPW65R018CFD7XKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

库存历史记录

3 个月趋势:

-27.16%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-05-28

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPW65R018CFD7XKSA1 的描述。

Mosfet, N-Ch, 650V, 106A, To-247 Rohs Compliant: Yes |Infineon Technologies IPW65R018CFD7XKSA1

Newark

Power MOSFET, N Channel, 650 V, 106 A, 0.018 ohm, TO-247, Through Hole

Avnet

Power Field-Effect Transistor, 106A I(D), 650V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

Infineon