Infineon IPW60R070CFD7XKSA1

Name: Infineon IPW60R070CFD7XKSA1
Brand: Infineon
SKU: IPW60R070CFD7XKSA1

Power MOSFET, N Channel, 600 V, 31 A, 0.057 ohm, TO-247, Through Hole

$ 3.079

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Distributor		SKU		Min	Pkg
Avnet	2	IPW60R070CFD7XKSA1	140	30				2.996	2.827	2.827	12h
Newark		IPW60R070CFD7XKSA1	429	1		7.740	4.970	4.370	4.350	4.350
Arrow Electronics	2	IPW60R070CFD7XKSA1	2,380	1		3.079	3.079	3.079	3.079	3.079
Future Electronics	2	IPW60R070CFD7XKSA1	90	30	Tube			5.500	5.440	5.390
Rochester Electronics		IPW60R070CFD7XKSA1	16,535					2.830	2.530	2.380	10h

数据表和文档

下载 Infineon IPW60R070CFD7XKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

-6.23%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-08-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPW60R070CFD7XKSA1 的描述。

Power MOSFET, N Channel, 600 V, 31 A, 0.057 ohm, TO-247, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 31A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

Mosfet, N-Ch, 600V, 31A, 150Deg C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPW60R070CFD7XKSA1

Newark

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Infineon