Infineon IPU95R3K7P7AKMA1

Name: Infineon IPU95R3K7P7AKMA1
Brand: Infineon
SKU: IPU95R3K7P7AKMA1

Power MOSFET, N Channel, 950 V, 2 A, 3.7 Ohm, TO-251 (IPAK), 3 Pins, Through Hole

$ 0.494

EOL

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Distributor		SKU		Min	Pkg
Newark		IPU95R3K7P7AKMA1	877	1		1.480	1.100	0.726	0.575	0.505
Arrow Electronics		IPU95R3K7P7AKMA1	1,300	1		0.408	0.398	0.398	0.398	0.398
Rochester Electronics		IPU95R3K7P7AKMA1	111,589					0.442	0.367	0.327	23h
DigiKey		IPU95R3K7P7AKMA1-ND	187	1	Tube	1.410	1.410	0.621	0.554	0.554
Future Electronics	2	IPU95R3K7P7AKMA1	0	75	Tube			0.575	0.560	0.520

数据表和文档

下载 Infineon IPU95R3K7P7AKMA1 的数据表和制造商文档。

Newark

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

+74.57%

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-06-01

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IPU95R3K7P7AKMA1 的描述。

Power MOSFET, N Channel, 950 V, 2 A, 3.7 Ohm, TO-251 (IPAK), 3 Pins, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 2A I(D), 950V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

IHS

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market, PG-TO251-3, RoHS

Infineon SCT

Mosfet, 950V, 2A, 150Deg C, 22W; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:950V; On Resistance Rds(On):3.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPU95R3K7P7AKMA1

Newark