Infineon IPT60R080G7XTMA1

Name: Infineon IPT60R080G7XTMA1
Brand: Infineon
SKU: IPT60R080G7XTMA1

Transistor Mosfet N-ch 600V 29A 8-PIN Hsof T/r

$ 3.22

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Distributor		SKU		Min	Pkg
Newark		IPT60R080G7XTMA1	4,818	1	Cut Tape	6.780	5.390	4.210	4.010	4.010
Arrow Electronics		IPT60R080G7XTMA1	1,721	1		3.338	3.338	3.338	3.338	3.338
Rochester Electronics		IPT60R080G7XTMA1	13,929					2.620	2.350	2.210	20h
DigiKey	3	IPT60R080G7XTMA1CT-ND	3,877	1	Cut Tape	7.010	4.719	3.419	3.220	3.220
Future Electronics	2	IPT60R080G7XTMA1	0	2K	Tape & Reel					4.210

数据表和文档

下载 Infineon IPT60R080G7XTMA1 的数据表和制造商文档。

Newark

Datasheet14 页0 年前

IHS

库存历史记录

3 个月趋势:

-3.40%

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供应链

Country of OriginAustria, Germany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-01-27

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPT60R080G7XTMA1 的描述。

Transistor MOSFET N-CH 600V 29A 8-Pin HSOF T/R

Avnet Japan

A new SMD package using Kelvin source concept, PG-HSOF-8, RoHS

Infineon SCT

Power Field-Effect Transistor, 29A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS IPT60R, Vds=600 V, 29 A, HSOF-8, , 8

UnikeyIC

IPT60R080 - 600V COOLMOS N-CHANN

DigiKey Marketplace

Mosfet, N Ch, 600V, 29A, Hsof; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes |Infineon Technologies IPT60R080G7XTMA1

Newark

For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Infineon