Infineon IPT030N12N3GATMA1

Name: Infineon IPT030N12N3GATMA1
Brand: Infineon
SKU: IPT030N12N3GATMA1

Mosfet, N-Ch, 120V, 237A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT030N12N3GATMA1

$ 2.88

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Distributor		SKU		Min	Pkg
Newark		IPT030N12N3GATMA1	1,438	1	Cut Tape	6.570	4.560	3.320	3.160	3.160
Arrow Electronics		IPT030N12N3GATMA1	2,000	1		3.670	3.233	2.839	2.839	2.839
Rutronik		TMOS3652	2,000	2K						2.280	9h
Rochester Electronics		IPT030N12N3GATMA1	22,185					2.430	2.180	2.050	2h
DigiKey	3	448-IPT030N12N3GATMA1CT-ND	4,868	1	Cut Tape	6.630	4.449	3.213	2.988	2.988

数据表和文档

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库存历史记录

3 个月趋势:

+5.49%

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供应链

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-11-23

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPT030N12N3GATMA1 的描述。

Mosfet, N-Ch, 120V, 237A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT030N12N3GATMA1

Newark

Power MOSFET, N Channel, 120 V, 237 A, 0.0025 ohm, HSOF, Surface Mount

Avnet

Trans MOSFET N-CH 120V 24A 9-Pin(8+Tab) HSOF T/R

Verical

Power Field-Effect Transistor, 237A I(D), 120V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS OptiMOS, Vds=120 V, 237 A, HSOF-8, , 8

UnikeyIC

2.4 mm 3.8 W 1 21.2 ns 51.8 ns 175 °C -55 °C 2.5 mΩ

Augswan

The IPT030N12N3 G is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance (RDS(on)). Infineon’s OptiMOS™ power MOSFET 120 V technology meets TO-Leadless package, optimized for high-current applications. The TOLL package is the perfect solution for high power density applications that benefit from 30 percent smaller footprint compared to D2PAK 7-pin and lower package inductances.

Infineon