Infineon IPT026N10N5ATMA1

Name: Infineon IPT026N10N5ATMA1
Brand: Infineon
SKU: IPT026N10N5ATMA1

Power MOSFET, N Channel, 100 V, 202 A, 0.0022 ohm, HSOF, Surface Mount

$ 1.809

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IPT026N10N5ATMA1	2,000	2K						1.351	2d
Newark		IPT026N10N5ATMA1	2,175	1	Cut Tape	4.390	2.890	2.050	1.860	1.860
Arrow Electronics		IPT026N10N5ATMA1	2,000	1		2.304	2.304	2.304	2.304	2.304
Rochester Electronics		IPT026N10N5ATMA1	4,766					1.470	1.320	1.240	4h
DigiKey	3	448-IPT026N10N5ATMA1CT-ND	3,021	1	Cut Tape	4.520	2.977	2.101	1.807	1.807

数据表和文档

下载 Infineon IPT026N10N5ATMA1 的数据表和制造商文档。

IHS

Datasheet11 页0 年前

库存历史记录

3 个月趋势:

-66.79%

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供应链

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2019-03-28

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPT026N10N5ATMA1 的描述。

Power MOSFET, N Channel, 100 V, 202 A, 0.0022 ohm, HSOF, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 100V 27A 9-Pin(8+Tab) HSOF T/R

Verical

Mosfet, N-Ch, 100V, 202A, 175Deg C, 214W Rohs Compliant: Yes |Infineon Technologies IPT026N10N5ATMA1

Newark

Infineon NMOS, Vds=100 V, 202 A, D2PAK £¨TO-263

UnikeyIC

Power Field-Effect Transistor, 202A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 100V 27A/202A 8HSOF

DigiKey

100V, 202A, 2.6mOhm, N-Channel, HSOF-8

Future Electronics

Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.

Infineon