供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-08-31
LTD Date2015-02-28
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描述
由其分销商提供的 Infineon IPS135N03L G 的描述。
31W 20V 4.8nC@ 4.5V,10nC@ 10V 1N 30V 13.5m¦¸@ 10V 30A 770pF@ 15V TO-251 6.73mm*2.38mm*6.22mm
Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC PACKAGE-3
MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-251-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1 nF
Max Operating Temperature175 °C
Max Power Dissipation31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31 W
Rds On Max13.5 mΩ
Rise Time3 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time3 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm