Infineon IPS021

Name: Infineon IPS021
Brand: Infineon
SKU: IPS021

IPS021 Series 6 V 150 mOhm Fully Protected Power Mosfet Switch - TO-220-3

$ 1.39

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IPS021	10					1.560	1.390	1.310	3h
Farnell	IPS021	0	1		3.602*	3.602*	1.613*	1.142*	1.142*	2h
Win Source	WS-IPS021	100	11				0.849	0.566	0.566	3h
Worldway Electronics	IPS021	11,711	7	Tube		0.456	0.442	0.419	0.419	2h
Anlinkda	IPS021	17,568			0.800	0.717	0.652	0.629	0.618	8h

数据表和文档

下载 Infineon IPS021 的数据表和制造商文档。

IHS

Datasheet12 页24 年前

DigiKey

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IPS021 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.39.00.60

Introduction Date1998-09-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-01-15

LTD Date2018-07-15

描述

由其分销商提供的 Infineon IPS021 的描述。

IPS021 Series 6 V 150 mOhm Fully Protected Power Mosfet Switch - TO-220-3

Future Electronics

Intelligent Power Switch 1 Channel Low Side Driver in a TO-220AB Package

International Rectifier

FULLY PROTECTED POWER MOSFET SWITCH Buffer/Inverter Based Peripheral Driver, 4A, PSFM3

ComSIT Distribution GmbH

FULLY PROTECTED POWER MOSFET SWITCH | IC MOSFET LS DRIVER 5A TO-220AB

Win Source

Power Switch Lo Side 1.8A 3-Pin(3+Tab) TO-220AB

Avnet

IC PWR DRIVER N-CHAN 1:1 TO220AB

ODG (Origin Data Global)

IPS021 - FULLY PROTECTED SWITCH

Augswan

BUFFER/INVERTER PERIPHL DRIVER

Vigor Components

MOSFET, SMART SWITCH TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 47V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Power Di

Farnell

The IPS021/IPS021S are fully protected three terminals Mart POWER MOSFETs that feature over-cur rent, over-temperature, ESD protection and drain to source active clamp. These devices combine a HEXFET (R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching time sand provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oCor when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capa-bility is significantly enhanced by the active clamp and covers most inductive load demagnetizations.