供应链
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-07
Lifecycle StatusProduction (Last Updated: 1 week ago)
相关零件
STMicroelectronicsSTP15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package
InfineonIPP60R299CPXKSA1
96W 20V 2.5V 22nC@ 10V 1N 650V 299m¦¸@ 10V 11A 1.1nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
InfineonIPP60R380P6XKSA1
Mosfet Transistor, N Channel, 10.6 A, 600 V, 0.342 Ohm, 10 V, 4 V Rohs Compliant: Yes
STMicroelectronicsSTP11N65M5
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220 package
描述
由其分销商提供的 Infineon IPP65R420CFDXKSA1 的描述。
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation83.3 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance420 mΩ
Package Quantity500
Power Dissipation83.3 W
Rds On Max420 mΩ
Rise Time7 ns
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns