Infineon IPP60R600P6XKSA1

N-Channel 600 V 7.3 A 600 mO 12 nC CoolMOS P6 Power Transistor - TO-220

63W(Tc) 4.5V@ 200¦ÌA 12nC@ 10 V 1N 600V 600m¦¸@ 2.4A,10V 7.3A 557pF@100V TO-220 4.57mm*15.95mm

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

Mosfet, N-Ch, 600V, 7.3A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles