Infineon IPP60R385CPXKSA1

Name: Infineon IPP60R385CPXKSA1
Brand: Infineon
SKU: IPP60R385CPXKSA1

N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO-220-3

$ 0.983

NRND

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IPP60R385CPXKSA1	2,904					1.140	0.946	0.844	7h
Future Electronics	IPP60R385CPXKSA1	0	500	Tube				1.010	0.955
Avnet	IPP60R385CPXKSA1	0	500					0.942	0.926	1d
Arrow Electronics	IPP60R385CPXKSA1	0	500					1.004	1.004
Farnell	IPP60R385CPXKSA1	0	1		1.946*	1.719*	1.679*	1.573*	1.573*	18h

数据表和文档

下载 Infineon IPP60R385CPXKSA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Upverter

Farnell

库存历史记录

3 个月趋势:

+20.80%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IPP60R385CPXKSA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-08-31

Lifecycle StatusNRND (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IPP60R385CPXKSA1 的描述。

N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO-220-3

Future Electronics

Power MOSFET, N Channel, 650 V, 9 A, 350Milliohms, TO-220, 3 Pins, Through Hole

EBV Elektronik

Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220 Tube

Verical

83W(Tc) 20V 3.5V@ 340¦ÌA 22nC@ 10 V 1N 650V 385m¦¸@ 5.2A,10V 9A 790pF@100V TO-220

UnikeyIC

Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Jak Electronics

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:9A; On State Resistance:0.385ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC