Infineon IPN95R2K0P7ATMA1

Name: Infineon IPN95R2K0P7ATMA1
Brand: Infineon
SKU: IPN95R2K0P7ATMA1

Transistor, Mosfet, 950V Coolmos, P7 Sj Power, 2 Ohm, 4 Amp, SOT223

$ 0.55

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IPN95R2K0P7ATMA1	305	1	Cut Tape	1.520	1.010	0.715	0.550	0.550
Arrow Electronics		IPN95R2K0P7ATMA1	2,330	1		1.113	1.113	1.113	1.113	1.113
DigiKey	3	IPN95R2K0P7ATMA1CT-ND	20,795	1	Cut Tape	1.510	0.952	0.632	0.450	0.450
RS (Formerly Allied Electronics)		IPN95R2K0P7ATMA1	0	20	Bulk			1.360	1.360	1.360	17h
Avnet		IPN95R2K0P7ATMA1	0	3K						0.351	2d

数据表和文档

下载 Infineon IPN95R2K0P7ATMA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

-0.51%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-06-01

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IPN95R2K0P7ATMA1 的描述。

TRANSISTOR, MOSFET, 950V COOLMOS, P7 SJ POWER, 2 OHM, 4AMP, SOT223

RS (Formerly Allied Electronics)

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market, PG-SOT223-4-3, RoHS

Infineon SCT

Mosfet, 950V, 4A, 150Deg C, 7W; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:950V; On Resistance Rds(On):1.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPN95R2K0P7ATMA1

Newark

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Infineon