Infineon IPN70R360P7SATMA1

Name: Infineon IPN70R360P7SATMA1
Brand: Infineon
SKU: IPN70R360P7SATMA1

Transistor Mosfet N-ch 700V 12.5A 3-PIN SOT-223 T/r

$ 0.427

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark	2	IPN70R360P7SATMA1	3,747	5	Cut Tape		0.943	0.685	0.629	0.629
Arrow Electronics	2	IPN70R360P7SATMA1	2,397	1		0.344	0.344	0.344	0.344	0.344
Future Electronics	2	IPN70R360P7SATMA1	18,000	3K	Tape & Reel					0.440
Rochester Electronics		IPN70R360P7SATMA1	71,355					0.414	0.344	0.306	19h
Avnet		IPN70R360P7SATMA1	0	3K						0.229	21h

数据表和文档

下载 Infineon IPN70R360P7SATMA1 的数据表和制造商文档。

IHS

Datasheet13 页0 年前

Future Electronics

TME

库存历史记录

3 个月趋势:

+6.70%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IPN70R360P7SATMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-06-23

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPN70R360P7SATMA1 的描述。

Transistor MOSFET N-CH 700V 12.5A 3-Pin SOT-223 T/R

EBV Elektronik

Combining excellent performance and ease-of-use, PG-SOT223-4-3, RoHS

Infineon SCT

7.2W 16V 16.4nC@ 10V 1N 700V 360m¦¸@ 10V 12.5A 517pF@ 400V SOT-223

UnikeyIC

Small Signal Field-Effect Transistor, 700V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon MOSFET IPN70R360P7SATMA1

RS APAC

Mosfet, N-Ch, 700V, 12.5A, 7.2W, Sot-223; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPN70R360P7SATMA1

Newark

CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).

Infineon