Infineon IPN60R3K4CEATMA1

Name: Infineon IPN60R3K4CEATMA1
Brand: Infineon
SKU: IPN60R3K4CEATMA1

Power MOSFET, N Channel, 600 V, 2.6 A, 3.06 ohm, SOT-223, Surface Mount

$ 0.189

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Distributor		SKU		Min	Pkg
Newark	2	IPN60R3K4CEATMA1	3,199	5	Cut Tape		0.469	0.319	0.255	0.255
Future Electronics	2	IPN60R3K4CEATMA1	18,000	3K	Tape & Reel					0.137
Arrow Electronics	3	IPN60R3K4CEATMA1	5,200	1		0.563	0.382	0.258	0.149	0.149
Rutronik		TMOS1440	15,000	3K						0.139	20h
Rochester Electronics		IPN60R3K4CEATMA1	1,148					0.157	0.130	0.116	13h

数据表和文档

下载 Infineon IPN60R3K4CEATMA1 的数据表和制造商文档。

IHS

Datasheet13 页0 年前

库存历史记录

3 个月趋势:

+13.51%

CAD 模型

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-04-29

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IPN60R3K4CEATMA1 的描述。

Power MOSFET, N Channel, 600 V, 2.6 A, 3.06 ohm, SOT-223, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R

Verical

5KW 20V 3.5V 4.6nC@ 10V 600V 3.4¦¸@ 10V 2.6A 93pF@ 100V SOT-223 6.7mm*1.7mm

UnikeyIC

Mosfet, N-Ch, 600V, 2.6A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPN60R3K4CEATMA1

Newark

Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

Infineon