Infineon IPN60R1K5PFD7SATMA1

Name: Infineon IPN60R1K5PFD7SATMA1
Brand: Infineon
SKU: IPN60R1K5PFD7SATMA1

600V CoolMOS PFD7 superjunction MOSFET in SOT-223 package

$ 0.299

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Distributor		SKU		Min	Pkg
Newark		IPN60R1K5PFD7SATMA1	1,748	1	Cut Tape	1.030	0.677	0.471	0.354	0.354
Arrow Electronics		IPN60R1K5PFD7SATMA1	3,000	1		0.212	0.212	0.212	0.212	0.212
Rutronik		STDMOS1112	27,000	3K						0.248	7h
Rochester Electronics		IPN60R1K5PFD7SATMA1	4,448					0.268	0.222	0.198	23h
DigiKey	2	448-IPN60R1K5PFD7SATMA1CT-ND	1,350	1	Cut Tape	1.060	0.659	0.430	0.299	0.299

数据表和文档

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IHS

Datasheet14 页0 年前

库存历史记录

3 个月趋势:

-49.25%

CAD 模型

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供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-10-24

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPN60R1K5PFD7SATMA1 的描述。

600V CoolMOS PFD7 superjunction MOSFET in SOT-223 package

Future Electronics

Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) SOT-223 T/R

Verical

Mosfet, N-Ch, 600V, 3.6A, Sot-223 Rohs Compliant: Yes |Infineon Technologies IPN60R1K5PFD7SATMA1

Newark

6W(Tc) 20V 4.5V@ 40¦ÌA 4.6nC@ 10 V 1N 600V 1.5¦¸@ 700mA,10V 1899-12-31 06:00:00 169pF@400V SOT-223

UnikeyIC

Power Field-Effect Transistor, 3.6A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261

IHS

This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing.This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Infineon