供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
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描述
由其分销商提供的 Infineon IPI50R140CP 的描述。
MOSFET N-CH 550V 23A TO262-3
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
COOLMOS N-CHANNEL POWER MOSFET
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:23A; On State Resistance:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)550 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.54 nF
Max Operating Temperature150 °C
Max Power Dissipation192 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation192 W
Rds On Max140 mΩ
Rise Time14 ns
TerminationThrough Hole
Turn-Off Delay Time80 ns