Infineon IPDQ60R010S7XTMA1

Power MOSFET, N Channel, 600 V, 50 A, 0.009 ohm, HDSOP, Surface Mount

IPDQ60R Series 600 V 50 A 694 W 10 mOhm Single N-Channel MOSFET - PG-HDSOP-22

Trans MOSFET N-CH 600V 50A 22-Pin HDSOP EP T/R

Power Field-Effect Transistor, 50A I(D), 600V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon NMOS IPDQ60R010S7, Vds=600 V, 50 A, QDPAK, , 22

2.5 mm 694 W 1 50 ns 180 ns 150 °C -55 °C 9 mΩ

Mosfet, N-Ch, 600V, 50A, Hdsop; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:12V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPDQ60R010S7XTMA1

The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies.