价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IPDD60R125G7XTMA1 | 3 | 1 | |||||||||
| Rochester Electronics | IPDD60R125G7XTMA1 | 33 | 2h | |||||||||
| DigiKey | IPDD60R125G7XTMA1CT-ND | 1,060 | 1 | Cut Tape | ||||||||
| Newark | IPDD60R125G7XTMA1 | 0 | 1 | Cut Tape | ||||||||
| Future Electronics | IPDD60R125G7XTMA1 | 0 | 1700 | Tape & Reel |
供应链
Country of OriginAustria, Germany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-01-05
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
描述
由其分销商提供的 Infineon IPDD60R125G7XTMA1 的描述。
Transistor MOSFET N-CH 600V 20A 10-Pin HDSOP T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N-Ch, 600V, 20A, Hdsop; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.108Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPDD60R125G7XTMA1
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.The benefits of the already existing high voltage technology 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Number of Terminals10
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity1700
PackagingTape & Reel
Power Dissipation120 W
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time18 ns
Dimensions
Height2.35 mm