Infineon IPD70R600P7SAUMA1

Name: Infineon IPD70R600P7SAUMA1
Brand: Infineon
SKU: IPD70R600P7SAUMA1

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, TO-252 (DPAK), Surface Mount

$ 0.313

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Distributor		SKU		Min	Pkg
Avnet	2	16AC3358	116	1		1.020	0.653	0.524	0.524	0.524	3d
Newark	2	IPD70R600P7SAUMA1	116	1	Cut Tape	0.121	0.121	0.121	0.121	0.121
Arrow Electronics	2	IPD70R600P7SAUMA1	4,925	1		0.331	0.331	0.331	0.331	0.331
Rochester Electronics		IPD70R600P7SAUMA1	10,000					0.329	0.273	0.243	14h
Future Electronics	2	IPD70R600P7SAUMA1	0	2500	Tape & Reel					0.235

数据表和文档

下载 Infineon IPD70R600P7SAUMA1 的数据表和制造商文档。

ODG (Origin Data Global)

Datasheet13 页0 年前

IHS

库存历史记录

3 个月趋势:

-48.68%

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供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-10-11

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD70R600P7SAUMA1 的描述。

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Power Field-Effect Transistor, 8.5A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Mosfet, N-Ch, 700V, 8.5A, 150Deg C/43.1W; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPD70R600P7SAUMA1

Newark

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:Efficiency and thermalsEase-of-useEMI behavior

Infineon