Infineon IPD60R360P7ATMA1

Name: Infineon IPD60R360P7ATMA1
Brand: Infineon
SKU: IPD60R360P7ATMA1

MOSFET N-CH 600V 9A TO252-3 / N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3

$ 0.585

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		IPD60R360P7ATMA1	1,685	1	Cut Tape	1.990	1.340	0.961	0.749	0.749
Arrow Electronics	2	IPD60R360P7ATMA1	12,029	1		1.642	1.642	1.642	1.642	1.642
Rochester Electronics		IPD60R360P7ATMA1	1,613					0.605	0.502	0.448	14h
DigiKey	3	IPD60R360P7ATMA1CT-ND	13,972	1	Cut Tape	1.900	1.207	0.810	0.585	0.585
Avnet		IPD60R360P7ATMA1	0	2500						0.469	1d

数据表和文档

下载 Infineon IPD60R360P7ATMA1 的数据表和制造商文档。

ODG (Origin Data Global)

Datasheet14 页0 年前

IHS

TME

库存历史记录

3 个月趋势:

-18.14%

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供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2017-03-03

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPD60R360P7ATMA1 的描述。

MOSFET N-CH 600V 9A TO252-3 / N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3

Win Source

Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Mosfet, N-Ch, 600V, 9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.305Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes |Infineon Technologies IPD60R360P7ATMA1

Newark

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Infineon