由其分销商提供的 Infineon IPD30N10S3L34ATMA1 的描述。
MOSFET Transistor, N Channel, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V
Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS-T Power-Transistor
100V, N-Ch, 31 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
Infineon SCT
OPTIMOS-T POWER-TRANSISTOR Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0258oh; Available until stocks are exhausted Alternative available
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting