Infineon IPD25N06S240ATMA2

Name: Infineon IPD25N06S240ATMA2
Brand: Infineon
SKU: IPD25N06S240ATMA2

Mosfet Transistor, N Channel, 29 A, 55 V, 0.0286 Ohm, 10 V, 3 V

$ 0.43

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPD25N06S240ATMA2	2,400	1		0.390	0.390	0.390	0.390	0.390
Rochester Electronics		IPD25N06S240ATMA2	206,755					0.417	0.346	0.308	14h
DigiKey	2	448-IPD25N06S240ATMA2CT-ND	2,414	1	Cut Tape	1.450	0.914	0.605	0.430	0.430
Newark		IPD25N06S240ATMA2	0	1	Cut Tape	1.490	0.980	0.691	0.527	0.527
Avnet		IPD25N06S240ATMA2	0	2500						0.286	4d

数据表和文档

下载 Infineon IPD25N06S240ATMA2 的数据表和制造商文档。

IHS

Datasheet8 页19 年前

iiiC

库存历史记录

3 个月趋势:

-0.00%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-07-18

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD25N06S240ATMA2 的描述。

Mosfet Transistor, N Channel, 29 A, 55 V, 0.0286 Ohm, 10 V, 3 V

Newark

55V, N-Ch, 40 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 55V, 29A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0286ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

Farnell

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon