Infineon IPD135N03LGATMA1

Name: Infineon IPD135N03LGATMA1
Brand: Infineon
SKU: IPD135N03LGATMA1

Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK

$ 0.262

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IPD135N03LGATMA1	4,265	5	Cut Tape		0.543	0.377	0.334	0.334
Arrow Electronics		IPD135N03LGATMA1	12	1		0.344	0.080	0.080	0.080	0.080
Rutronik		TMOSP9749	5,000	2500						0.225	4h
DigiKey	3	IPD135N03LGATMA1CT-ND	19,703	1	Cut Tape	0.970	0.602	0.391	0.271	0.271
Avnet		IPD135N03LGATMA1	0	2500						0.151	23h

数据表和文档

下载 Infineon IPD135N03LGATMA1 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet11 页0 年前

Upverter

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-4.51%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-10-23

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD135N03LGATMA1 的描述。

Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK

Verical

Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N CH, 30A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V;

Farnell

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon