Infineon IPD096N08N3GATMA1

Name: Infineon IPD096N08N3GATMA1
Brand: Infineon
SKU: IPD096N08N3GATMA1

Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) DPAK T/R

$ 0.597

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	34AC1666	89	1		1.950	1.250	0.833	0.660	0.660	2d
Newark		IPD096N08N3GATMA1	89	1	Cut Tape	2.040	1.290	0.870	0.636	0.636
Rochester Electronics		IPD096N08N3GATMA1	2,057					0.658	0.546	0.487	4h
DigiKey	2	IPD096N08N3GATMA1CT-ND	2,316	1	Cut Tape	1.890	1.201	0.809	0.597	0.597
Future Electronics	2	IPD096N08N3GATMA1	0	2500	Tape & Reel					0.470

数据表和文档

下载 Infineon IPD096N08N3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页11 年前

_legacy Avnet

库存历史记录

3 个月趋势:

-25.14%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-20

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IPD096N08N3GATMA1 的描述。

Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) DPAK T/R

Verical

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 80V, 73A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 73A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0079ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell