Infineon IPB65R095C7ATMA2

Name: Infineon IPB65R095C7ATMA2
Brand: Infineon
SKU: IPB65R095C7ATMA2

Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-263 (D2PAK), Surface Mount

$ 2.784

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Distributor		SKU		Min	Pkg
Avnet	2	02AH4433	326	1		6.130	4.100	2.960	2.910	2.910	1d
Newark		IPB65R095C7ATMA2	335	1	Cut Tape	2.550	2.550	2.550	2.550	2.550
Arrow Electronics	2	IPB65R095C7ATMA2	2,000	1		5.028	5.028	5.028	5.028	5.028
Rochester Electronics		IPB65R095C7ATMA2	1,000					2.430	2.180	2.050	11h
DigiKey	3	IPB65R095C7ATMA2CT-ND	2,151	1	Cut Tape	6.620	4.442	3.207	2.982	2.982

数据表和文档

下载 Infineon IPB65R095C7ATMA2 的数据表和制造商文档。

IHS

Datasheet15 页0 年前

库存历史记录

3 个月趋势:

-3.72%

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供应链

Country of OriginGermany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPB65R095C7ATMA2 的描述。

Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

MOSFET N-CH 650V 24A TO263-3 / N-Channel 650 V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3

Win Source

Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Mosfet, N-Ch, 650V, 24A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon Technologies IPB65R095C7ATMA2

Newark

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon