Infineon IPB65R045C7ATMA2

Name: Infineon IPB65R045C7ATMA2
Brand: Infineon
SKU: IPB65R045C7ATMA2

Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-263 (D2PAK), Surface Mount

$ 5.505

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Distributor		SKU		Min	Pkg
Avnet	2	IPB65R045C7ATMA2	2,000	1K					5.346	5.091	6d
Newark		IPB65R045C7ATMA2	1,027	1	Cut Tape	11.530	7.940	5.930	5.930	5.930
Future Electronics	2	IPB65R045C7ATMA2	1,000	1K	Tape & Reel				5.660	5.660
Arrow Electronics	2	IPB65R045C7ATMA2	702	1		10.039	7.103	7.088	7.088	7.088
DigiKey	3	IPB65R045C7ATMA2CT-ND	4,562	1	Cut Tape	11.330	7.825	6.074	6.074	6.074

数据表和文档

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IHS

Datasheet15 页0 年前

库存历史记录

3 个月趋势:

+12.91%

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供应链

Country of OriginGermany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-04-18

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IPB65R045C7ATMA2 的描述。

Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Trans MOSFET N-CH 650V 46A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 46A, 650V, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; P

Farnell

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon