Infineon IPB144N12N3GATMA1

Name: Infineon IPB144N12N3GATMA1
Brand: Infineon
SKU: IPB144N12N3GATMA1

Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 1.09

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPB144N12N3GATMA1	25,071					1.290	1.070	0.955	14h
DigiKey	2	IPB144N12N3GATMA1CT-ND	150	1	Cut Tape	3.300	2.145	1.485	1.485	1.485
Farnell	2	IPB144N12N3GATMA1	240	1	Cut Tape	3.039*	1.972*	1.364*	1.364*	1.364*	14h
Mouser	2	726-IPB144N12N3GATMA	3,452	1	Tape & Reel	3.090	2.010	1.390	1.160	1.090
Microchip USA		IPB144N12N3GATMA1	1,942	600					2.396	2.396	4d

数据表和文档

下载 Infineon IPB144N12N3GATMA1 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

库存历史记录

3 个月趋势:

+147%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-07-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB144N12N3GATMA1 的描述。

Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R

Fly-Wing Technology

Power Field-Effect Transistor, 56A I(D), 120V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 120V, 41A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 41A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0123ohm; Rds(on) Test Voltag; Available until stocks are exhausted

Farnell

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Infineon