价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPB123N10N3GATMA1 | 24 | 12h | |||||||||
| Avnet | IPB123N10N3GATMA1 | 0 | 1K | 14h | ||||||||
| Farnell | IPB123N10N3GATMA1 | 0 | 1 | Cut Tape | 12h | |||||||
| Win Source | WS-IPB123N10N3GATMA1 | 6,370 | 22 | 13h | ||||||||
| Worldway Electronics | IPB123N10N3GATMA1 | 19,425 | 7 | Tape & Reel | 12h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-07-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-09-30
LTD Date2026-03-31
描述
由其分销商提供的 Infineon IPB123N10N3GATMA1 的描述。
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK
IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
Infineon SCT
MOSFET, N CH, 100V, 58A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0107oh; Available until stocks are exhausted Alternative available
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)58 A
Drain to Source Resistance12.3 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.88 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance12.3 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation94 W
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time14 ns