Infineon IPB032N10N5ATMA1

Name: Infineon IPB032N10N5ATMA1
Brand: Infineon
SKU: IPB032N10N5ATMA1

MOSFET N-CH 100V 166A TO263-7 / N-Channel 100 V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7

$ 1.88

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Newark		IPB032N10N5ATMA1	301	1	Cut Tape	5.540	3.910	2.990	2.600	2.600
Arrow Electronics		IPB032N10N5ATMA1	910	1		4.494	4.494	4.494	4.494	4.494
Rochester Electronics		IPB032N10N5ATMA1	656					1.640	1.470	1.380	7h
DigiKey	3	IPB032N10N5ATMA1CT-ND	1,703	1	Cut Tape	4.930	3.261	2.312	2.008	2.008
Avnet		IPB032N10N5ATMA1	0	1K					1.875	1.683	10h

数据表和文档

下载 Infineon IPB032N10N5ATMA1 的数据表和制造商文档。

IHS

Datasheet11 页0 年前

库存历史记录

3 个月趋势:

-0.43%

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供应链

Country of OriginAustria, Germany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-12-12

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IPB032N10N5ATMA1 的描述。

MOSFET N-CH 100V 166A TO263-7 / N-Channel 100 V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7

Win Source

OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-7, RoHS

Infineon SCT

Power Field-Effect Transistor, 166A I(D), 100V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

IHS

OptiMOS™ 5 100V power MOSFET IPB032N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Infineon