Infineon IPB026N10NF2SATMA1

Name: Infineon IPB026N10NF2SATMA1
Brand: Infineon
SKU: IPB026N10NF2SATMA1

Power MOSFET, N Channel, 100 V, 162 A, 0.0022 ohm, TO-263 (D2PAK), Surface Mount

$ 1.787

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Distributor	SKU		Min	Pkg
Avnet	IPB026N10NF2SATMA1	800	800					1.256	1.210	12h
Arrow Electronics	IPB026N10NF2SATMA1	800	1		2.162	2.162	2.162	2.162	2.162
Future Electronics	IPB026N10NF2SATMA1	800	800	Tape & Reel				1.380	1.350
Rutronik	STDMOS1473	15	1					1.990	1.590	18h
Rochester Electronics	IPB026N10NF2SATMA1	7,200					1.620	1.450	1.360	10h

数据表和文档

下载 Infineon IPB026N10NF2SATMA1 的数据表和制造商文档。

IHS

Datasheet11 页0 年前

库存历史记录

3 个月趋势:

+6.44%

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供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2022-09-23

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IPB026N10NF2SATMA1 的描述。

Power MOSFET, N Channel, 100 V, 162 A, 0.0022 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Mosfet, N-Ch, 100V, 162A, To-263 Rohs Compliant: Yes |Infineon IPB026N10NF2SATMA1

Newark

Power Field-Effect Transistor, 162A I(D), 100V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Infineon