Infineon IPB020N10N5ATMA1

Name: Infineon IPB020N10N5ATMA1
Brand: Infineon
SKU: IPB020N10N5ATMA1

Power MOSFET, N Channel, 100 V, 176 A, 2 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

$ 2.628

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价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IPB020N10N5ATMA1	1,455	1	Cut Tape	6.710	4.490	3.660	3.660	3.660
Future Electronics	2	IPB020N10N5ATMA1	8,000	1K	Tape & Reel				2.670	2.630
Arrow Electronics		IPB020N10N5ATMA1	2,141	1		3.459	3.459	3.459	3.459	3.459
Rutronik		TMOSP11477	11,000	1K					2.570	2.570	17h
Rochester Electronics		IPB020N10N5ATMA1	993					2.310	2.070	1.940	10h

数据表和文档

下载 Infineon IPB020N10N5ATMA1 的数据表和制造商文档。

IHS

Datasheet12 页0 年前

Datasheet11 页0 年前

Newark

库存历史记录

3 个月趋势:

-25.90%

CAD 模型

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供应链

Country of OriginAustria, Germany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-05-05

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPB020N10N5ATMA1 的描述。

Power MOSFET, N Channel, 100 V, 176 A, 2 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

Avnet

IPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3

Future Electronics

OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS

Infineon SCT

Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB020N10N5ATMA1

Newark

OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Infineon