Infineon IPA90R340C3XKSA2

Name: Infineon IPA90R340C3XKSA2
Brand: Infineon
SKU: IPA90R340C3XKSA2

MOSFET N-CH 900V 15A TO220-FP / N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP

$ 2.277

NRND

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价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IPA90R340C3XKSA2	1,110					2.290	2.050	1.930	22h
Arrow Electronics		IPA90R340C3XKSA2	1,150	1		5.725	3.065	2.769	2.277	2.277
Newark		IPA90R340C3XKSA2	0	1		5.920	3.190	2.890	2.700	2.700
Avnet		IPA90R340C3XKSA2	0	500					1.991	1.900	1d
Future Electronics	2	IPA90R340C3XKSA2	0	50	Tube			2.290	2.230	2.170

数据表和文档

下载 Infineon IPA90R340C3XKSA2 的数据表和制造商文档。

IHS

Datasheet10 页17 年前

Farnell

库存历史记录

3 个月趋势:

+113%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-07-29

Lifecycle StatusNRND (Last Updated: 1 month ago)

LTB Date2020-12-31

LTD Date2021-06-30

描述

由其分销商提供的 Infineon IPA90R340C3XKSA2 的描述。

MOSFET N-CH 900V 15A TO220-FP / N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP

Win Source

Power Transistor MOSFET N-Channel Enhancement 900V 15A 3-Pin TO-220FP

Avnet Japan

Power MOSFET, N Channel, 900 V, 15 A, 0.28 ohm, TO-220FP, Through Hole

EBV Elektronik

35W(Tc) 20V 3.5V@1mA 94nC@ 10 V 1N 900V 340m¦¸@ 9.2A,10V 15A 2.4nF@100V TO-220-3

Unikeyic (ICkey)

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.9pF 50volts C0G +/-0.5pF

Utmel Electronic

Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Mosfet, N Channel, 900V, 15A, To-220-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon IPA90R340C3XKSA1

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:15A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Infineon