Infineon IPA80R1K0CEXKSA2

Name: Infineon IPA80R1K0CEXKSA2
Brand: Infineon
SKU: IPA80R1K0CEXKSA2

Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-220FP Tube

$ 0.687

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Distributor		SKU		Min
Newark		IPA80R1K0CEXKSA2	813	1	2.500	1.870	1.240	0.981	0.902
Arrow Electronics	2	IPA80R1K0CEXKSA2	1,500	1	1.337	0.937	0.842	0.671	0.671
Rutronik		TMOS1343	250	50			0.779	0.624	0.624	14h
Rochester Electronics		IPA80R1K0CEXKSA2	108,665				0.872	0.724	0.645	6h
Avnet		IPA80R1K0CEXKSA2	0	1K				0.618	0.589	1d

数据表和文档

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IHS

Datasheet15 页0 年前

Upverter

库存历史记录

3 个月趋势:

+1.23%

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EE Concierge	符号封装

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-09-25

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IPA80R1K0CEXKSA2 的描述。

Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-220FP Tube

Verical

32W 20V 3.9V 31nC@ 10V 1N 800V 950m¦¸@ 10V 5.7A 785pF@ 100V TO-220FP , 10.5mm*470cm*15.99mm

UnikeyIC

800V 5.7A 950mΩ@10V,3.6A 32W 3.9V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

ODG (Origin Data Global)

Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 800V, 5.7A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.83Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA80R1K0CEXKSA2

Newark

800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

Infineon