Infineon IPA65R310CFDXKSA1

Name: Infineon IPA65R310CFDXKSA1
Brand: Infineon
SKU: IPA65R310CFDXKSA1

Transistor MOSFET N-CH 650V 11.4A 3-Pin TO-220FP Tube

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell		IPA65R310CFDXKSA1	0	1		3.081*	2.481*	2.195*	1.800*	1.772*	4h
Microchip USA		IPA65R310CFDXKSA1	267	150	Tube				11.335	11.335	1d
Win Source		WS-IPA65R310CFD	2,200	6			9.793	6.529	6.529	6.529	18h
Worldway Electronics	2	IPA65R310CFDXKSA1	15,361	7	Tube		0.718	0.696	0.659	0.659	1d
Aztech		IPA65R310CFDXKSA1	9,420			2.290	2.290	2.290	2.290	2.290	1d

数据表和文档

下载 Infineon IPA65R310CFDXKSA1 的数据表和制造商文档。

IHS

Datasheet20 页14 年前

Arrow Electronics

库存历史记录

3 个月趋势:

Restocked

CAD 模型

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-07

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

LTB Date2023-08-31

LTD Date2024-02-29

描述

由其分销商提供的 Infineon IPA65R310CFDXKSA1 的描述。

Transistor MOSFET N-CH 650V 11.4A 3-Pin TO-220FP Tube

Avnet Japan

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 650V, 11.4A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA65R310CFDXKSA1

Newark

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon