Infineon IPA60R280P7XKSA1

Name: Infineon IPA60R280P7XKSA1
Brand: Infineon
SKU: IPA60R280P7XKSA1

MOSFET N-CH 600V 12A TO220 / N-Channel 600 V 12A (Tc) 24W (Tc) Through Hole PG-TO220-FP

$ 0.844

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IPA60R280P7XKSA1	323	1		2.560	1.920	1.290	1.020	0.947
Arrow Electronics		IPA60R280P7XKSA1	500	1		0.879	0.879	0.879	0.879	0.879
Rochester Electronics		IPA60R280P7XKSA1	4,188					0.936	0.777	0.693	22h
Avnet		IPA60R280P7XKSA1	0	500					0.745	0.689	2d
Future Electronics	2	IPA60R280P7XKSA1	0	500	Tube				1.130	1.110

数据表和文档

下载 Infineon IPA60R280P7XKSA1 的数据表和制造商文档。

TME

Datasheet14 页0 年前

IHS

Future Electronics

库存历史记录

3 个月趋势:

+2.73%

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供应链

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-05-18

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPA60R280P7XKSA1 的描述。

MOSFET N-CH 600V 12A TO220 / N-Channel 600 V 12A (Tc) 24W (Tc) Through Hole PG-TO220-FP

Win Source

Transistor MOSFET N-CH 600V 12A 3-Pin TO-220FP Tube

Avnet

Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 600V, 12A, 24W, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPA60R280P7XKSA1

Newark

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Infineon