供应链
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-12-05
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
相关零件
描述
由其分销商提供的 Infineon IPA60R230P6XKSA1 的描述。
Trans MOSFET N-CH 600V 16.8A 3-Pin(3+Tab) TO-220FP Tube
MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Power Field-Effect Transistor, 16.8A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)16.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.45 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance230 mΩ
Package Quantity500
Power Dissipation33 W
Rds On Max230 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time12 ns