Infineon IPA60R190P6XKSA1

Name: Infineon IPA60R190P6XKSA1
Brand: Infineon
SKU: IPA60R190P6XKSA1

34KW 20V 4.5V 37NC@ 10V 1N 600V 190M¦¸@ 10V 20A 1.75NF@ 100V TO-220FP , 10.5MM*470CM*16MM

$ 1

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Distributor		SKU		Min	Pkg
Newark		IPA60R190P6XKSA1	558	1		2.940	2.120	1.310	0.985	0.929
Arrow Electronics	2	IPA60R190P6XKSA1	1,495	1		2.904	1.557	1.415	1.135	1.135
Rochester Electronics		IPA60R190P6XKSA1	327					1.210	1.000	0.895	24m
DigiKey		IPA60R190P6XKSA1-ND	703	1	Tube	3.140	3.140	1.405	1.049	0.890
Future Electronics	2	IPA60R190P6XKSA1	0	50	Tube			0.910	0.860	0.815

数据表和文档

下载 Infineon IPA60R190P6XKSA1 的数据表和制造商文档。

IHS

Datasheet19 页0 年前

Newark

库存历史记录

3 个月趋势:

+24.77%

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-06-07

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

描述

由其分销商提供的 Infineon IPA60R190P6XKSA1 的描述。

34KW 20V 4.5V 37nC@ 10V 1N 600V 190m¦¸@ 10V 20A 1.75nF@ 100V TO-220FP , 10.5mm*470cm*16mm

Unikeyic (ICkey)

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Infineon

MOSFET, N-CH, 600V, 20.2A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.171ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

Farnell