供应链
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-06
Lifecycle StatusNRND (Last Updated: 1 month ago)
相关零件
InfineonIPP60R190E6XKSA1
MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube
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描述
由其分销商提供的 Infineon IPA60R190E6XKSA1 的描述。
Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220FP Tube
Power MOSFET, N Channel, 650 V, 20.2 A, 0.17 ohm, TO-220, Through Hole
Transistor MOSFET N-CH 650V 22.2A 3-Pin TO-220
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.7pF 50volts C0G +/-0.25pF
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
Mosfet, n Ch,650V,20.2A, to-220-3,transistor Polarity-N Channel, continuous Drain Current Id-20.2A, drain Source Voltage Vds-650V, on Resistance Rdson-0.17Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-3V, power Rohs Compliant: Yes |Infineon Technologies IPA60R190E6XKSA1
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation34 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation34 W
Rds On Max190 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time12 ns