Infineon IMZA65R057M1HXKSA1

Silicon Carbide MOSFET, Single, N Channel, 35 A, 650 V, 0.057 ohm, TO-247

Power Field-Effect Transistor, 35A I(D), 650V, 0.074ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Sic Mosfet, N-Ch, 650V, 35A, To-247-4; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; No. Of Pins:4Pins; Rds(On) Test Voltage:18V; Power Dissipation:133W Rohs Compliant: Yes |Infineon Technologies IMZA65R057M1HXKSA1

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.